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Semiconductor Processing
/ Devices
- "A Passive Inertial Switch Using MWCNT-Hydrogel Composite with Wireless Interrogation Capability,"J. C. Kuo, P. H. Kuo, Y. T. Lai, C. W. Ma, S. S. Lu, Y. J. Yang,IEEE Journal of Microelectromechanical Systems, vol.22, no.3, pp.646-654, June, 2013.
- "A fully integrated humidity sensor system-on-chip fabricated by micro-stamping technology,"Huang, C.-W., Huang, Y.-J., Lu, S.-S., and Lin, C.-T.,Sensors, 2012, 12, 11592-11600.
- "Chip Implementation with a Combined Wireless Temperature Sensor and Reference Devices Based on the DZTC Principle,"Chang, M.-H.;Huang, Y.-J.; Huang, H.-P.; Lu, S.-S. Sensors, vol.11, pp.10308-10325, 2011.
- "The RF Characteristics of Micro- machined Coplanar Waveguide in 0.13 mm CMOS Technology by CMOS compatible ICP Dry Etching,"T. Wang, S. S. Lu, Y. S. Lin, Y. Z. Juang, and G. W. Huang,Microwave and Optical Technology Letters, vol. 51, no. 11, Nov. 2009.
- "A Micromachined SiGe HBT Ultra-Wideband Low-Noise Amplifier by BiCMOS Compatible ICP Deep-Trench Technology,"P. L. Huang, Y. T. Lin, T. Wang, Y. S. Lin, and S. S. Lu, Microwave and Optical Technology Letters, vol. 51, no. 11, Nov. 2009.
- ¡§Micromachined V-band CMOS bandpass filter with 2 dB insertion loss,¡¨P. L. Huang, J. F. Chang, Y. S. Lin, and S.-S. Lu,
Electronics Letters (IET EL), Vol.45, No.2, January 2009.
- "Low Noise Figure P+ AA Mesh Inductors for CMOS UWB RFIC Applications," C.-C. Chen, ¡K, and S. S. Lu, IEEE Trans. on Electron Devices, vol. 55, no.12, pp.3542-3548, Dec. 2008.
- ¡§Micromachined CMOS E-band bandpass coplanar filters,¡¨P.L. Huang, T. Wang, ¡K, Shey-Shi Lu,
Microwave and Optical Technology Letters, Vol.50, Issue 12, pp.3123-3125, Dec. 2008
- "Micromachined 50 GHz/60 GHz Phi Filters by CMOS Compatible ICP Deep Trench Technology," P. L. Huang, T. Wang, Y. S. Lin, S. S. Lu, Y. M. Teng, and G. W. Huang,
Microwave and Optical Technology Letters, vol. 50, no. 12, pp. 3142-3146, Dec. 2008.
- ¡§Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 £gm BiCMOS technology,¡¨Yu-Tso Lin, Tao Wang, and Shey-Shi Lu, Electronics Letters (IET EL), vol.44, pp. 563-564, April. 2008.
- "Ultra Low Loss and Broadband Micromachined transmission Line Inductors for 30-60 GHz CMOS RFIC Applications,"Y.-S. Lin, C.-C. Chen, H. B. Liang, C.-Z. Chen, J.-F. Chang, T. Wang, and S. S. Lu,
IEEE Trans. on Electron Devices, vol. 54, no.9, pp.2512-2518, Sept. 2007.
- "A High-Performance Micromachined RF Monolithic Transformer with Optimized Pattern Ground Shield for UWB RFIC Applications," Y.-S. Lin, C.-C. Chen, H. B. Liang, C.-Z. Chen, J.-F. Chang, T. Wang, and S. S. Lu, IEEE Trans. on Electron Devices, vol. 54, no.3, pp.609-613, Mar. 2007.
- "Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain," W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P.Lin, S. S. Lu, C. C. Meng, and C. W. Liu,
IEEE Trans. on Electron Devices, vol. 54, no.1, pp.160-162, Jan. 2007.
- "Characterization and Modeling of Pattern Ground Shield (PGS) and Silicon-Substrate Effects on Radio-Frequency (RF) Monolithic Bifilar Transformers for Ultra-Wide Band (UWB) Radio-Frequency Integrated Circuit (RFIC) Applications," Y. S. Lin, C. C. Chen, H. B. Liang, T. Wang, and S. S. Lu,
Japanese Journal of Applied Physics, vol. 46, no. 1A, pp. 65-70, 2007.
- ¡¨Micromachined 22 GHz PI filter by CMOS compatible ICP deep trench technology, ¡¨Tao Wang, Yo-Sheng Lin, and Shey-Shi Lu, IEEElectronics Letters, March 29 2007.
- " A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology, " Tao Wang, Chun-Hao Chen, Yo-Sheng Lin, and Shey-Shi Lu,IEEE Electron Device Lett. , vol. 27, issue 4, April 2006.
- "An ultra low-loss and broadband micromachined RF inductor for RFIC input-matching applications,¡¨Tao Wang, Yo-Sheng Lin, and Shey-Shi Lu, IEEE Trans. Electron Device, vol. 53, issue 3, March 2006.
- " Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology, ¡§Tao Wang, Hsiao-Chin Chen, Hung-Wei Chiu, Yo-Sheng Lin, Guo-Wei Huang, and Shey-Shi Lu,IEEE Trans. Microw. Theory Tech., vol. 54, Feb. 2006.
- "The Determination of S parameters from the Poles of Voltage Gain Transfer Function for RF IC Design," S. S. Lu, Y. S. Lin, H. W. Chiu, Y. C. Chen and C. C. Meng,
IEEE Trans. Circuits and System, vol.52, no.1, pp.191-199, Jan. 2005.
- "The origin of the kink phenomenon of
transistor scattering parameter S22,"S. S. Lu, , C. C. Meng, T. W. Chen, and H.C. Chen,
IEEE Tran. on Microwave Theory and Technique,
Vol.49, No.2, pp. 333-340, February 2001.
- "A novel interpretation of transistor
S parameters by poles and zeros for RFIC
Circuit Design,"S. S. Lu, , C. C. Meng, T. W. Chen, and H.C.
Chen,
IEEE Tran. on Microwave
Theory and Technique, Vol.49, No.2, pp.
406~409, February 2001.
- "A High Quality Factor and Low Power Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications,"Yo-Sheng Lin, Hsiao-Bin Liang, Chi-Chen Chen, Tao Wang, and Shey-Shi Lu,
IEEE Electron Devices Letters, vol.27, no.8, pp.684-687, Aug. 2006.
- "An Analysis of Base Bias Current Effect on SiGe HBT,"Y.-S. Lin and S.-S. Lu,
IEEE Trans. on Electron Devices, vol.52, no.1, pp.132-136, Jan. 2005.
- "Temperature-Dependence of Noise Figure of Monolithic RF Transformers on a Thin (20 um) Silicon Substrate,"Y.-S. Lin, T. Wang, and S.-S. Lu,
IEEE Electron Devices Letters, Vol.26, no.3, pp.208-211, Mar.2005.
- "An Analysis of
Small-Signal Substrate Resistance Effect in
Deep-Submicrometer RF MOSFETs,"
Y. S. Lin, and S. S. Lu,
IEEE Tran.
on Microwave Theory and Technique, vol.51,
no.5, pp.1534-1539, May, 2003.
- "An Analysis
of Small-Signal Gate-Drain Resistance Effect
on RF Power MOSFETs,"Yo-Sheng Lin and Shey-Shi Lu,
IEEE Trans. on
Electron Devices, vol. 50, no.2, pp.525-528,
Feb., 2003.
- "DC and RF Characteristics of
E-mode Ga0.51In0.49P/In0.15Ga0.85As
Pseudomorphic HEMT's (pHEMT's),"Hsing-Yuan Tu, Tao-Hsuan Chou, Yo-Sheng
Lin+, Hsien-Chin Chiu*, Ping-Yu Chen, and
Shey-Shi Lu,
IEEE
Electron Devices Letters, vol.24, no.3,
pp.132-134, March, 2003.
- "An Analysis
of the Anomalous Dip in Scattering Parameter
S22 of InGaP-GaAs Heterojunction Bipolar
Transistors(HBTs)," Hsing-Yuan Tu,Yo-Sheng Lin,Ping-Yu Chen and
Shey-shi Lu, and Hsuan-Yu Pan,
IEEE Trans. on Electron
Devices, vol. 49,No.10, pp.1831-1833,October
2002.
- "A
process for the formation of Submicron
V-Gate by Micromachined V-Grooves Using
GaInP/GaAs Selective Etching Technique," H. W. Chiu, N. S. Ho and S. S. Lu,
IEEE Electron Devices Letters, Vol. 22,
No.9, pp. 420-422, Sept. 2001.
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